Heterojunction N-shape Switching Transistors with Metal Oxide and Small Molecules for Random Number Generation and Spiking Neural Networks
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내용
This study investigates the behavior of heterojunction devices using the proposed n-type zinc-tin oxide (ZTO) semiconductor and the organic semiconductor dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT). The aforementioned intrinsic properties are employed in two distinct simultaneous applications. In particular, the non-interlayered TFT, which displays unstable behavior, is effectively employed in random number generator (RNG) applications by exploiting the considerable noise at the pn-junction, as evidenced by low-frequency noise (LFN). Conversely, the stable interlayered TFT is employed in neuromorphic applications due to its stable and superior negative transconductance (NTC) behavior. It is anticipated that the findings of this study will provide a foundation for further research into the applicability of heterojunction NTC.