Photoprogrammable OFET Memory Devices based on IGZO Floating Gate
발표자
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초록
내용
Organic field-effect transistor (OFET) memory devices, which offer advantages such as low cost and flexibility, play an essential role in data storage within computer systems. Various materials, such as metal nanoparticles, organic/inorganic semiconductors, and polymer electrolytes, have been used as a floating gate to trap charges. Here, we demonstrated the IGZO floating gate-based OFET memory device. In particular, the photoresponsive channel (DNTT) of the memory device led to the charge trapping in IGZO floating gate formed by oblique angle deposition (OAD) under light illumination. Hence, multiple programming states were implemented under three programming conditions: (i) voltage only, (ii) light only, and (iii) both voltage and light, and we showed the reliability of these states for 3,000 s through retention characteristics. Moreover, the memory windows were 14 V, 7 V, and 23 V for each condition, respectively, highlighting the multi states depending on the programming inputs.