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Improving Sensitivity of Electrolyte-Gated Field-Effect Transistor Biosensors by Modulating Semiconductor Conductance
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Field-effect transistors (FETs) are increasingly utilized in various applications in biosensors. This study focuses on the fabrication of high-performance biosensors using electrolyte-gated field-effect transistors based on IGZO (Indium Gallium Zinc Oxide) semiconductors. To assess the performance variations of biosensors based on semiconductor conductivity, devices with varying conductivity levels were created to compare their sensitivity. All fabricated biosensors demonstrated successful detection of tau protein, a biomarker for Alzheimer's disease. The electrode passivation employed a self-assembled multilayer (SAML) approach, providing excellent insulation for operational safety. Additionally, the semiconductor film's sol-gel process and the sensing area's surface treatment were conducted using a solution process, offering the benefits of simplicity and cost-effectiveness in sensor fabrication.
발표코드
2PS-108
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