Influence of Spatially Separating Layer for Stable and High-efficiency Operation of Metal Oxide and Organic Anti-ambipolar Hetero Transistors
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When fabricating metal oxide-organic heterojunction (HJ) transistors, organic receives defects from the metal oxide surface, and adversely affects the transistor performance. In this research, a p-organic/spatially separating layer (SSL)/n-oxide (pSn) anti-ambipolar hetero transistor (AAT) was fabricated by inserting an SSL to reduce defects between metal oxide-organic HJs. As a result, we fabricated various transistor structures with different SSL locations and types and investigated the influence of the SSL through electrical characteristics. Furthermore, the role of SSL was validated by investigating the carrier transport mechanism of AAT using 2D finite-element simulations and low-frequency noise analysis. The operational stability of pSn AAT was assessed through stress tests, transient response analyses and long-term stability evaluations, where pSn AAT operated stably for 215 days due to SSL. As a result, we suggested that SSL is a promising new design for improving AAT performance.