Synthesis of low dielectric photosensitive polyimide for semiconductor redistribution layer (RDL) using spiro structure
발표자
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초록
내용
As the semiconductor industry evolves, redistribution layer (RDL) performance has become critical to accommodate increased speed and capacity required by next-generation devices. Therefore, it is important to develop materials with low dielectric constant and photosensitivity for use in RDL. Polyimide has an inherently high dielectric constant value. However, in this study, low Dk values were obtained by utilizing a rigid and twisted spiro structure that provides high free volume and suppresses chain packing, thereby reducing density. Additionally, we introduced photosensitive functional groups into the hydroxyl groups present in the polymer backbone. The synthesized polymer was confirmed using 1H NMR, GPC, FT-IR. Additionally, the photolithography evaluation showed a resolution of 20 μm, and dielectric constant evaluation showed a Dk value of 2.67 at 40 GHz. Comprehensively this polymers are expected to contribute to miniaturization and performance improvement of semiconductor devices