Stability and Electrical Performance Improvement of Transparent <em>p</em>-Type CuI for Large Area Electronics
발표자
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초록
내용
Insufficient hole mobility (µh), lack of doping methods, and instability are critical barriers for industrial application of transparent p-type materials for large area electronics. We have developed transparent p-type electronics with CuI for thin-film transistor (TFT) & transparent conducting electrode (TCE). The mild processing of CuI thin-film with acetonitrile showed successful control of iodine vacancy and moderate TFT performance. Moreover, the hole concentration (nh) suppression with Zn doping resulted high performance TFT with µh of 5.3 cm2/Vs and high Ion/Ioff of 107. For p-type TCE, the S doping of CuI was achieved with liquid iodination and solution-process. Especially, the liquid iodinated CuI showed large nh of 3 × 1020 cm-3 and high conductivity of 511 S/cm. With the continuous developments, the CuI could provide alternative solutions for high performance transparent p-type electronics.