Development of high-performance p-type semiconductors for transistors
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Developing high-mobility p-type semiconductors that can be grown using silicon-compatible processes at low temperatures, has remained challenging in the electronics community for the integration of complementary electronics with the well-developed n-type counterparts. In this talk, I will discuss our recent progress in developing high-performance p-channel materials for thin film transistors. We developed amorphous p-type oxide semiconductor composed of selenium-alloyed tellurium in a tellurium sub-oxide matrix, with field-effect hole mobility of ~15 cm2 V-1 s-1 and on/off current ratios of ~106, with wafer-scale uniformity. Next, I will present high-performance tin perovskite transistors based on caesium-formamidinium-phenethylammonium to create high-quality cascaded films, with record hole mobilities of over 70 cm2 V−1 s−1 and on/off current ratios of over 108, comparable to the commercial low-temperature polysilicon technique level.