Patternable Non-Faradaic Ionic Diodes of Ionoelastomer Heterojunctions.
발표자
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초록
내용
Ionoelastomers are conductive elastomers in which one ion species is anchored to the polymer network while the counter ion can freely move. The junction of two opposite charges in ionoelastomers yields an ionic double layer (IDL), similar to a depletion layer of p-n junction. The formation of IDL create liquid-free, soft diodes without electrochemical reactions. In this study, we demonstrate non-faradaic and solvent-free patternable ionic diodes of ionoelastomer using digital light processing (DLP). Unlike inorganic silicon semiconductors, ionoelastomers can be easily patterned with UV light exposure. We generate laser-induced graphene (LIG) electrodes using a laser-cutter, then we pattern p,n-type ionoelastomers on the LIG surface using DLP. Also, We demonstrate logic gate and control their performance by adjusting their geometric characteristics.