Fabrication of Multiscale Porous Carbon Thin Film electrodes Using Semiconductor Process
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Multiscale porous carbon thin films have high demand for next-generation compact energy storage devices. However, conventional solution coating/printing has limitations in preparing well-defined pores with sub-micrometer-resolution. Here, we demonstrate a semiconductor process for manufacturing multiscale porous carbon thin films. This is achieved by carbonization of oxide-supported multi-beam interference lithography photoresist patterns. Interference lithography defines macropore patterns, and the oxide shell suppresses thermal decomposition condensation to inscribe the mesopore in the pattern framework. Our multiscale porous carbon thin film exhibits a high BET surface area of 539 m2/g and a high porosity of about 80%. We demonstrate these porous carbon thin films as micro-supercapacitor and lithium oxygen battery electrodes.