Enhancing the external quantum efficiency of organic light-emitting transistors
발표자
()
초록
내용
In order to combine the dual functionalities of a transistor and a diode in a single device, organic light-emitting transistors (OLETs) have been a great applicant. OLETs have demonstrated excellent electrical performance in a variety of application areas but exhibit insufficient optical performance. A visual simulation is carried out to enhance the optical performance and reduce optical losses in OLETs. This simulation mainly focuses on layer thickness and refractive index of transporting layer and gate materials. The waveguide mode is mostly responsible for optical energy losses and absorption by the gate materials in OLETs. Organic layers also contribute to these losses. Adjusting the simulation parameters such as thickness and refractive index of gate materials as well as transporting materials, these losses can be significantly minimized. Under an excellent charge balance external quantum efficiency as high as 40% can be produced by the OLETs device.