Defect passivation in 2-D lead-free perovskite field-effect transistor by Lewis-base small molecules
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내용
Metal halide perovskites (MHPs) have recently garnered great attention for their optoelectronic and electronic properties. However, lead toxicity and stability issues must be addressed before they can be fully utilized in device applications. A tin-based lead-free perovskite material, PEA2SnI4, has potential as a p-type field effect transistor (FET) due to its intrinsic p-doping nature and relatively high stability compared to three-dimensional counterparts. However, self-oxidation and ion migration along grain boundaries remain major challenges. In this work, we employ Lewis acid-base small molecules to investigate the defect passivation mechanisms of tin-based perovskites and improve FET properties. This could lead to the development of high-performance halide-perovskite-based electronic devices