Tailored Energy Level of Colloidal Quantum Dot Film by Fractional Ligand Exchange
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초록
내용
Colloidal quantum dots (CQDs) have gained increasing attention as next-generation materials due to the successful surface modifications that can modulate their electronic properties. The ligand-replacement process enables the tuning of the band edge position of CQDs through the reconstruction of the dipole layer on the surface. However, this process is not compatible with the original fabrication method of CQD layers, which requires consideration of both the solubility of CQDs and the wettability of CQD layers. In this study, we employed a fractional ligand replacement process to tune the band edge position while preserving the properties of CQDs. The band edge positions were investigated using photoelectron yield spectroscopy, avoiding the charge-up problem caused by pristine long-insulating ligands. Our results unveiled a linear relationship between shifts in the band edge positions of CQDs and the fractional ligand replacement process, providing a guide for optimizing the band alignment of CQD layers for CQD optoelectronic devices.