Dual Electrochemical Doping for Threshold Voltage Tuning in Ionogel Gated Transistors
발표자
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초록
내용
To increase the practicality of the electrolyte-gated transistors (EGTs) in electronic circuits, systematic control of threshold voltage (Vth) is important. Herein, we propose a facile strategy for delicately and systematically tuning Vth by controlling the electrochemical doping of electrolyte ions into polymer semiconductors. The size and structure of anion in the ionogel mainly determine the Vth, as well as other transistor characteristics such as subthreshold swing and charge carrier mobility. More importantly, When the molar fractions of component ions were changed in the binary ionogel gate dielectrics, device performance including Vth could be finely controlled. Overall, these results provide an important guideline for material selection in ionic/electronic mixed systems and also open a route for controlling the device characteristics to expand the practicality and applicability of ionogel-based EGTs.