Effect of Thermal Annealing of ZnO Layer on Dark Current and Specific Detectivity of Near-Infrared Organic Photodetectors
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Recently, the near-infrared organic photodetectors (NIR-OPDs) have attracted attention for their potential applications to image sensor, biomedical devices, and wireless communication systems. Zinc oxide (ZnO), is one of the most widely used hole blocking layer in inverted NIR-OPDs for dark current suppression. In this study, we investigated the effect of thermal annealing of ZnO film on surface morphology and performance of NIR-OPDs. The ZnO film optimized with an annealing time of 20 min showed the lowest surface roughness of 0.870 nm, which resulted in the lowest dark current density (JD) of 1.10 × 10-8 A/cm2. Owing this beneficial properties, using the optimized ZnO layer, we attained high performance NIR OPDs exhiting specific detectivity (D*) of 6.90 × 1012 Jones at 850 nm under a bias of -0.5 V.