Patterning of organic layers for high-performance OTFT by selective contact evaporation printing
발표자
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초록
내용
Selective contact evaporation printing (SCEP) method is introduced for the integrated device with the controlled gate leakage current of an organic thin film transistors (OTFTs). The dielectric and semiconducting layers are carefully patterned with the pre-patterned poly(dimethyl siloxane) (PDMS) for realizing the surface modification of each layer with under-micron pattern width. In particularly, the molecular diffusion of polymers into the free-volume of the PDMS mold is systematically investigated with molecular weights of the insulating polymers. Moreover, organic semiconductors are patterned with under-micron level scales by SCEP with a control of contact conditions. Then, the OTFT with the patterned layers are fabricated and evaluated for the highly integrated electric devices.