Enhancing the Performance of Perovskite Quantum Dots Light-Emitting Diodes via a Buffer Hole Injection Layer
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초록
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Perovskite quantum dot light-emitting diodes (PQLEDs) have been extensively studied for next-generation displays and PEDOT:PSS is the most commonly used hole injection layer (HIL) for PeQLEDs. However, PEDOT:PSS has a low work function which can create a large energy barrier with the emission layer. To address this issue, we incorporated perfluorinated ionomer (PFI) into PEDOT:PSS (mHIL), forming a gradient work function mHIL for PeQLED devices. Upon investigating the effect of mHIL thickness over device performance, it can be seen that the use of mHIL can promote the hole injection and transport within PeLEDs, improving device performance. The modified device based on the mHIL exhibited a 48% improvement of external quantum efficiency as compared to the control device (Pristine PEDOT: PSS) along with lower turn-on voltage and higher current efficiency. This indicates possibility of mHIL to be an excellent replacement of conventional PEDOT:PSS for efficient PeQLED devices.