Defect-Covered Perovskite Optoelectronics via Tailoring PDI-derivative Interface for Optimized Current Generation under Various Illumination
발표자
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초록
내용
In this study, one of the PDI-derivative named “PDINN” is introduced as an intermediate layer material of light sensing/ energy conversion device that control the interface defects in electron transport layer. At both ends of the PDI derivative (PDINN) are symmetrical aliphatic amine groups and were deposited between cathode and electron transport layer. The effect of the interfacial defects cover layer on the performance of perovskite devices due to the chemical and structural characteristics of the PDINN has been investigated. The PDINN intermediate layer adjusts the work function of the electrode to improve the charge transfer characteristics and the performance of the device through the improvement of the morphology of the electron transport layer. The improvement in photo-voltaic effect and detectivity according to the thickness differences of the PDINN intermediate layer were confirmed and determined under various illumination conditions.