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제출 정보

발표분야
콜로이드 및 분자조립 부문위원회
발표 구분
초청강연
제목
Quantum tunneling-induced rectifying molecular memristors
발표자

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초록

내용
In this talk, I will address the mechanism for the charge transport at molecular interface showing dual functionality (i.e., rectification and conductance switching at the same time) which can potentially function as next-generation electronic devices (e.g., a selector-free molecular memory device or an artificial synapse).
The molecular interface is composed of alkanethiolates terminated by a bipyridine (BIPY) group complexed with transition metal ions. The hysteresis of conductance shown in these BIPY-MCl2 junctions changes upon the metal ion and the voltage applied to the junction. The hysteretic behavior of conductance in these junctions appears only in the incoherent Fowler-Nordheim (FN) tunneling regime. Using this correlation, the conductance characteristics of BIPY-MCl2 junctions can be controlled. This voltage-induced change of conductance demonstrates a simple, fast, and reversible way to modulate conductance in molecular tunneling junctions.
발표코드
1O2-2 (15:10-15:25)
발표일정
2006-04-06 09:30 - 11:00