Low-voltage operating organic thin film transistors with ultrathin polymer gate insulator synthesized via iCVD
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Gate insulator plays a crucial role in building low-voltage operating organic devices with high charge carrier mobility because it affects the devices' performance, stability, and physical flexibility. The gate insulator in OTFTs should have a uniform and flat surface, high capacitance, and good interfacial match with the organic semiconductor layer. However, achieving a thickness under 100 nm with a uniform coverage with conventional solution-based processes is challenging. Herein, we introduce the iCVD technique to deposit uniform gate insulators for OTFT. The gate insulator made by iCVD formed a stable interface with organic semiconductor materials, which helped us to achieve high carrier mobility with a low operating voltage. The OTFT exhibited threshold voltage near 0 V and saturation mobility of higher than 5cm^2/vs in an operating range of under -2V. We expect our OTFT to be used to make organic transistor circuits such as inverters or flexible electronic sensors in the future.