Contact engineering for high-performance all vdWs contact WSe<sub>2</sub> Field-Effect Transistors
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초록
내용
Two-dimensional transition metal dichalcogenides (TMD) have been presented as an alternative that offers a variety of properties to electronic devices, including thermal stability, flexibility, and high carrier mobility. However, contacts in 2D devices usually have a large Schottky barrier (SB) and do not follow the Schottky–Mott rule, making it difficult to reduce contact resistance. We reported all vdWs contact high performance p-type field effect transistors (FETs) based on WSe2 as the active channel with VSe2 source/drain contacts. All vdWs contact FETs have weak interfacial adhesion and a vdWs gap exists between metal and TMD which induces an additional SB. Vacuum annealing significantly improved ohmic contact reducing the vdWs gap and SB. Also, the SB can be tunable and vanish on vdWs metal-semiconductor junction due to the suppression of metal-induced gap states. The VSe2 is high work function metal and it can be effectively reducing Fermi-level pinning.