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분자전자 부문위원회
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Defect engineering of metal-halide perovskites for next-generation optoelectronic devices
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Metal-halide perovskites are a promising material for next-generation optoelectronic devices such as LEDs and solar cells. However, perovskites fundamentally suffer from their internal defects in the bulk and at the surface. Thus, various strategies for defect passivation by using different classes of materials have been presented. Here, we show advancement in defect passivation from the use of external organic chemical reagents to the incorporation of low-dimensional perovskites into the 3D perovskites. These strategies of defect passivation prove to be effective in terms of suppression of defect or trap formation and its migration. Thus, LEDs and solar cells employing defect-engineered perovskites exhibit improved optoelectronic characteristics and operational stability.
발표코드
2O1-1 (15:50-16:10)
발표일정
2006-04-07 09:30 - 11:00