Effects of Fluorination Density in Solution-Processed Polyimide Gate Dielectric on its Surface Crystal Growth and Device Operation Stability
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초록
내용
Polyimides (PIs) are of great interest as a dielectric layer for electronic devices because of their outstanding chemical, mechanical and thermal stability. By introducing fluorinated functional groups, PIs can have more beneficial features, such as solution-processability at low temperatures, high dielectric strength, and lower surface energy due to the low polarizability of C-F bonds. In this study, five different PIs with different fluorine densities and backbones are synthesized, and their performance as a dielectric layer is investigated. Depositing a few monolayers of organic semiconductor molecules on the surface showed two distinct growth patterns in AFM and GIWAXS results. The growth pattern and device performances are then correlated with the surface fluorine density. All synthesized PIs have shown superior bias stability compared to silicon oxide dielectric, and an organic complementary inverter circuit was demonstrated with one of the PIs.