Pattern transfer to silicon substrates via block-copolymer liquid phase infiltration
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The self-assembly technique of BCPs has been developed in recent years to fulfill the demands for high-resolution patterning with the advantages of low-cost and simple-process fabrication technique. Inorganic precursors were selectively combined with one of the polymers for application as an Etch mask with liquid process infiltration (LPI). This film has been transcribed for various silicon substrates such as Si, SiO2 and Si3N4. In this work, inorganic precursors were selectively incorporated into the pyridine domains. The structure where the metal is selectively combined serves as a mask during oxygen or fluorine gas etching. Thus, the silicon substrates are etched except for the residual inorganic mask area. The pattern was successfully transferred to the silicon substrates and the results are investigated by cross-section SEM images. The morphology of the film pattern was characterized by AFM, SEM, and TEM. Their structure and properties were investigated systematically in this work.