Cross linkable hole transport materials based on dibenzo[b,d]furan for high performance quantum dot light emitting diodes
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초록
내용
Solution-processed quantum dot light emitting diodes(QLEDs) have been extensively studied due to its advantages of the narrow emission spectrum, easy bandgap, and size tunability of quantum dot. However, QLEDs have faced a challenging issue dissolving the quantum dot and the hole transport layer(HTL) interface. To solve the intermixing of underlying layer, it is effective to use cross linkable materials as HTL. Here, we design and synthesize novel cross linkable hole transport materials(HTMs) based on triphenylamine(TPA) with divinyl functional groups at 1-,2-,3-, and 4-position of dibenzo[b,d]furan(DBF). Among them, TPA introduced at the 3-position of DBF has shown excellent solvent resistance and low crosslinking temperature of 150℃ as well as a high external quantum efficiency, maximum current efficiency, and maximum power efficiency of 18.59%, 78.48cd A-1, and 78.14 lm W-1, respectively.