Soft Optoelectronic Devices by Elastic Light Absorption Layer Consisting of a p-n Junction
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Soft organic optoelectronic devices have been developed considerably recently because of their crucial advantages such as light-weight, mechanical softness, low-cost manufacturing, etc. For future wearable electronics, for example, skin-mountable electronics, artificial vision systems, optical communications, etc. Especially, organic photodetector is one of the essential sensing components for the various optoelectronic systems. Therefore, the development of soft organic photodetectors provides a better route to achieve the demonstration of the wearable electronic system. Here, we propose a fully soft photodetector based on elastic light absorption layer that is composed of a p-n junction by polymeric semiconductors. Depending on the composition of the light absorption layer, the fabricated devices' performance and origin of performance variation were characterized and investigated, respectively. In addition, the demonstrated soft organic optoelectronic devices show stable operation under mechanical strain, which could be a promising candidate for future electronic devices.