Reduction of line edge roughness in nano-patterning via combination directed self-assembly (DSA) and extreme ultraviolet (EUV) lithography
발표자
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초록
내용
Extreme ultraviolet (EUV) lithography enables the fabrication of 10nm or less circuit patterns, however improving line edge roughness or line width roughness (LER, LWR) is still a remained challenge to make it as a viable tool for ultra-high resolution patterning technology. In this study, we investigate the possibility of overcoming LER issues and improving circuit patterns by combining Directed Self-Assembly (DSA) of block copolymer films with EUV lithography technology. Using TICG (Theoretically Informed Coarse-Grained) model-based Monte Carlo simulations, we predicted LER changes in DSA patterns when EUV patterns with 2D chemical contrast or 3D topographical structure were provided as a guiding pattern. We further explored the self-assembly of modified chain architecture for high-quality, super-resolution patterning.