Synthesis of High-<em>k</em>, Ultrathin Polymer Gate Dielectric Materials and Their Application to Organic Electronic Devices
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초록
내용
High-k, ultrathin polymer gate dielectric materials composed of 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) were synthesized via initiated chemical vapor deposition (iCVD). The chemical composition of the copolymer film was systematically optimized to achieve high dielectric constant and robust insulating performance. Based on the high-k polymer, the organic/inorganic hybrid dielectric layer was developed where the thickness of the polymer film was precisely controlled to optimize organic thin-film transistor (OTFT) performance. Utilizing the hybrid dielectric, the ultralow-voltage (<3 V) OTFTs were fabricated, which showed 100% yield as well as excellent areal uniformity even with the ultrathin thickness of the dielectric layer (<20 nm). Moreover, the exceptionally high operational stability was achieved for the long-term operation (>30 hours) and the flexible OTFTs were demonstrated on a plastic substrate.