Near Infrared organic photodiode by plasmon absorption
발표자
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초록
내용
NIR refers to the wavelength range of 0.9-1.7um, which is the region just outside the visible ray in the infrared region. NIR imaging offers a number of advantages compared to visible when used for inspection, transportation, surveillance, process monitoring, and host of other applications. Meanwhile, efforts are being made to develop organic-based sensors to replace silicon-based inorganic sensors in the photodiode image sensor field. One advantage of organic photodiodes is that their conjugate length can be transformed, organic semiconductors with various energy levels can be realized. However, it is somewhat difficult to expand to the infrared regions beyond 1400 nm. Therefore, we envisioned a new method using plasmons to detect NIR using organic semiconductors. Plasmons are collective oscillations of electrons. Depending on the aspect of plasmon, resonance is possible in the NIR, Mid-IR, and terahertz regions. We fabricated a NIR organic photodiode by effectively transferring electric charge generated by plasmon resonance to an organic semiconductor.