Boosting the performances of solution processed vertical organic Schottky barrier transistors via silane-based SAM treatment
발표자
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초록
내용
In this study, in order to improve the overall performances of a polymer semiconductor-based organic Schottky barrier transistors (OSBTs) with a vertical structure, comprehensive studies are conducted focusing on the fill factor of source electrode. We show that a continuous AgNW source electrode with a large pore size can be realized by controlling the hydrophobicity of substrate through silane-based self-assembled monolayers (SAMs), resulting in extremely low off-current. Additionally, thanks to these SAMs, preferential molecular orientation of the polymer is improved resulting in increased current injection, which is confirmed by near edge x-ray absorption structure spectroscopy, and dielectric properties are enhanced. Through this silane-based SAMs, which were considered meaningless in vertical transistors, we successfully implement a high on/off ratio of over 106 and achieve output current saturation characteristic.