High-k Dielectric with Bis-acetylacetonate Azide-crosslinker for High-performance Solution-processed Oxide Transistors
발표자
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초록
내용
Highly efficient crosslinking strategy of the high-k dielectric layer using a bis-acetylacetonate azide-crosslinker is suggested. Different to the conventional crosslinking method with azide additives, bis-acetylacetonate azide-crosslinker efficiently connects between high-k oxide nanoparticles (NPs), resulting in dense and defect-free thin film morphology. For this purpose, we newly synthesize bis-acetylacetonate azide-crosslinker based on alkyl chain derivative which can be used not only for the dispersion of sol-gel synthesized ZrO2 NPs but also for nitrene crosslinking between ZrO2 NPs. From the optimized processing condition, we demonstrate high-performance n-type solution-processed oxide transistors consisting of In2O3/ZnO heterojunction structure as an active channel with high electron mobility, on/off ratio, and low subthreshold swing as well as low leakage current.