Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
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We fabricated a high-quality PHPS-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in OFETs and complementary inverters. The conversion process of PHPS to SiO2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO2 films were systematically investigated via FT-IR spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO2 gate dielectric layer showed a leakage current density of 9.7×10−12Acm−2 at 4.0MVcm−1. The fabrication of the PHPS-derived SiO2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future.