Control of surface defects for highly efficient Quasi-2D Perovskite Light-Emitting Diodes using passivation layer
발표자
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초록
내용
Organic–inorganic lead halide perovskites are promising candidates for high-performing Light Emitting Diodes due to the high color purity, low cost and simple solution process. However, surface defects in perovskite layers produced during the spin-coating process limit the performance of perovskite Light Emitting Diodes. In this study, we optimized the coating conditions of the Quasi-2D perovskite (PEA2(FAPbBr3)n-1PbBr4) layer by controlling the coating speed and the anti-solvent drop time to reduce grain size and surface defects. In addition, trioctylphosphine oxide (TOPO) was introduced as a surface passivation layer of perovskite to cover defects and improve the surface morphology, which lead to high efficiency for PeLED.