Solution processed polymer buffer layer for low-hysteresis carbon nanotube transistors.
발표자
()
초록
내용
Single-walled carbon nanotubes (SWNTs) is one of the actively researched nano-materials with one-dimensional (1D) structure due to its remarkable electrical, mechanical, and photophysical properties. However, the performance of semiconducting SWNTs transistors is affected by charge traps on dielectric/channel interface. Especially, SWNTs transistors show the large hysteretic characteristics on the conventional silicon oxide. Here, we utilize a hydroxyl-group free organic dielectric material, divinyl-tetramethyldisiloxane-bis (benzocyclobutene) (BCB) and achieve BCB/ ZrO2 bilayer dielectric layer by solution process for low-hysteresis.