F4-TCNQ as a P-type Dopant for Polymer Hole-Transporting Material to Reduce Hysteresis and Improve Stability of Perovskite Solar Cell
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Designing a hole transport material (HTM) is regarded as one of the most important approaches to improve the efficiency and stability of PSCs. Herein, an efficient model is suggested by optimizing the conjugated polymer, TFB (Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)]), and non-hygroscopic p-type dopant F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane). TFB-doped F4-TCNQ can be an ideal alternative to conventional HTM to realize low price, high hole mobility and suitable energy band alignment with perovskite material. The combination of HOMO level of TFB and LUMO level of F4-TCNQ was believed to favor an efficient charge and energy transfer between perovskite and hole transport layer (HTL), and to reduce charge recombination. Consequently, the combined utilization of the TFB and F4-TCNQ could enhance photoconductivity to improve power conversion efficiency, which resulted in the superior stability of the perovskite solar cells.