Optical analysis on outcoupling efficiency of Organic light-emitting transistor
발표자
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초록
내용
Recently, new topological development and introduction of new transporting materials in organic light-emitting transistors enable us to reduce loss mechanisms significantly which induced by metallic electrodes as well as from charge imbalance by pinning the emission zone in the center of the channel. These improvements lead to the high external quantum efficiency over 8% in OLETs. However, this value is still much lower than that of OLEDs less than a half. In this work, a comprehensive optical simulation has performed to show how to improve EQE of OLETs as similar as that of OLEDs. From the analysis, it has determined that the value of refractive index of transporting layers, reflectivity of the gate layer, and orientation of transition dipole moment and photo-luminescence quantum efficiency of the emissive material are key players to optimize the outcoupling efficiency of OLETs. As a result, we suggest that the optimized OLETs could reach a high EQE over 30% comparable to OLEDs.