Facile process of alkali metal sulfide doped ZnO devices
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Silicon-based semiconductors need a high capital intensity and energy consumption while maintaining high charge carrier mobility, electrical conductivity and large dielectric constant. But next generation semiconductors need transparency and flexibility. In modern technology, IGZO moves beyond traditional TFT with mobility far higher than amorphous silicon. But since Indium is a rare element with high demand, ZnO research without Indium is needed. Sol-gel ZnO synthesis is the simplest process. Inevitably ZnO has defects and low mobility. Recent research showed using sulfur doping to ZnO for restoring defects. This facile process fills oxygen vacancies with sulfur ions using by thiocyanate. And reached high detectivity values and excellent device stability. But this process decreases charge density. The purpose of this paper is to preserve charge density and restoring defects by doping alkali metal sulfide. As a result, it’s possible to realize ZnO having a mobility without defects.